Graphene exhibits an excellent carrier electronic mobility proper

Graphene exhibits an excellent carrier electronic mobility property [7, 8] and high transparency for visible and near-infrared spectra. Moreover, it is abundant in source and cheap in price, nontoxic, and harmless to people and environment. It can be adopted as a transparent conducting electrode in optoelectronic devices [9, 10]. For

example, Wu et al. reported graphene as a TC electrode for organic LED [11]. Also, Gan et al. and Ye et al. reported CdSe nanoribbon (NR)/graphene Schottky solar cells [12, 13]. In using graphene as a TC electrode, it is very important to deposit a large-scale uniform graphene film on Si and other substrates. Graphene has been deposited in various approaches, such as chemical vapor deposition (CVD) [14], AZD5153 in vitro metal-based epitaxy [15, 16], and other technologies [17, 18]. Recently, there have been reports on noncomposite reduction of learn more graphene oxide (GO) into graphene using chemical routes and

high-temperature annealing [19, 20]. It allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several selleck layers over large areas. However, it causes some drawbacks, such as five- and seven-membered ring topological defects, which will bring down the electric conductivity of graphene. CVD has been successfully used to synthesize large-scale, conductive, and transparent graphene films from catalytic reactions that can be transferred onto arbitrary substrates [9, 11]. For example, large-area graphene or few-layer graphene films on metal substrates such as Ni and Cu by CVD technology [21, 22] have been reported. Since the graphene film is commonly placed on SiO2 and other transparent insulators in fabricating optoelectronic device architectures, graphene films on Ni or Cu must be Adenosine triphosphate transferred to SiO2 and other transparent insulator substrates, which may perplex the preparation process and technique of devices. In this work, the objective of our research was to fabricate large-area graphene films on SiO2 substrates

and investigate their conductivity and transparency. Graphene on SiO2 can be easily used to make optoelectronic devices and freely transferred to other substrates by etching the SiO2 layer using HF. It is especially interesting for the purpose of constructing electrodes. Herein, we describe a simple and reproducible method to uniformly deposit a few layers of graphene films grown by CVD. We investigated the influence of deposition time and thickness on the transparent conducting characteristics: conductivity, sheet resistance, and transparency, of graphene films. It was found that the deposited large-scale, conductive, and highly transparent graphene films are suitable for use as constructing electrodes. Methods The graphene films were fabricated on quartz crystalline slides by a rapid CVD process.

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