The resistance values of all the elements in the humid synthetic

The resistance values of all the elements in the humid synthetic air decrease as humidity increases, as shown in Figure 2d.The sensor response (S) of all the elements to the T�CVOC test gas under different humidity conditions is summarized in Figure 3. The sensor sellectchem response of the aged Pt,Pd,Au/SnO2 element is almost independent Inhibitors,Modulators,Libraries of humidity, as shown in Figure 3a. The plots of Figure 3b show that the sensor response of non-aged Pt,Pd,Au/SnO2 element to 1,000 ��g/m3 T�CVOC test gas at 75%RH is smaller than that to 800 ��g/m3 T�CVOC test gas at 25 and 50%RH. Thus, the S value of the non-aged Pt,Pd,Au/SnO2 element depends on humidity, especially under high humidity conditions. For the aged Pt/SnO2 element, the sensor response has almost the same performance as the Pt,Pd,Au/SnO2 elements at 25%RH.

However, the sensor performance is reduced drastically by increasing the relative humidity to higher than 50%RH. The degradation of the sensor performance on the aged Pt/SnO2 is almost the same as non-aged Pt/SnO2 [7]. The S values of room air (approximately 40%RH) and dry air aged Pt,Pd,Au/SnO2 elements are compared with those of the high-humidity and the Inhibitors,Modulators,Libraries non-aged Pt,Pd,Au/SnO2 elements in Figure 3d. Though the sensor performance of the room air-aged Pt,Pd,Au/SnO2 element is slightly reduced by
Sensing from the ultraviolet (UV)-visible to the infrared is critical for a variety of industrial and scientific applications, including image sensing, communications, environmental monitoring, remote control, day- and night-time surveillance and chemical/biological sensing [1�C3].

Today, separate sensors are fabricated from inorganic materials for different sub-bands within the UV to near-infrared (NIR) wavelength (��) range Inhibitors,Modulators,Libraries [4]. Colloidal inorganic semiconductor quantum dots (PbS) were used to fabricate NIR-photodetectors onto gold interdigitated electrodes [5,6]. These NIR-photodetectors showed photoconductive Inhibitors,Modulators,Libraries gain and photoresponse out to 1,450 nm [6]. However, the quantum dot NIR-photodetectors were fabricated using the ��in-plane�� structure with electrode spacing >5 ��m. As a result the required driving voltage is too high (>40 V) to be used with any commercially available thin film transistor (TFTs) arrays for read-out. These limitations significantly restrict the application of inorganic photodetectors in day- and night-time surveillance and chemical/biological sensing where high-speed Brefeldin_A and low power photodetectors are desired.

Polymer photodetectors (PPDs) have been the subject of extensive research in the past decade. PPDs offer a number of advantages: large-area detection, wide selection of materials, thin and light weight, low-cost fabrication on flexible substrates and operation at room temperature. PPDs with fast temporal-response selleck chemicals Lenalidomide have been reported [7�C10].

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